BUK9618-55A NXP Semiconductors, BUK9618-55A Datasheet - Page 7

• Manufacturer Part Number: BUK9618-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9618-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
40
30
20
10
50
40
30
20
10
0
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
T
j
(V) = 3
= 175 °C
50
1
3.4
100
2
3.8
T
4
j
= 25 °C
150
3
5
All information provided in this document is subject to legal disclaimers.
V
I
GS
D
(A)
03ne43
03ne46
(V)
Rev. 02 — 16 February 2011
200
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
1.5
0.5
a
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9618-55A
60
60
max
typ
min
120
120
© NXP B.V. 2011. All rights reserved.
T
03aa33
T
j
j
( ° C)
03ne89
( ° C)
180
180
7 of 13