BUK9618-55A NXP Semiconductors, BUK9618-55A Datasheet - Page 6

• Manufacturer Part Number: BUK9618-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK9618-55A
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(A)
I
10
I
10
10
10
10
10
D
D
250
200
150
100
50
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
6
1
min
4
8
…continued
typ
6
V
2
GS
max
(V) = 10
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
8
GS
GS
03aa36
V
= 20 A; V
= 20 A; dI
DS
(V)
5
Figure 15
03ne45
= -10 V; V
2.2
(V)
3
Rev. 02 — 16 February 2011
4
10
3
GS
S
/dt = -100 A/µs;
DS
= 0 V; T
= 30 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
(S)
DSon
g
j
fs
= 25 °C
20
18
16
14
12
10
50
40
30
20
10
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
3
0
10
N-channel TrenchMOS logic level FET
5
20
7
BUK9618-55A
Min
-
-
-
30
9
11
40
Typ
0.85
53
101
© NXP B.V. 2011. All rights reserved.
13
50
V
I
Max
1.2
-
-
03ne44
GS
03ne42
D
(A)
(V)
15
60
Unit
V
ns
nC
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