BUK9615-100A NXP Semiconductors, BUK9615-100A Datasheet - Page 3

• Manufacturer Part Number: BUK9615-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9615-100A
Product data sheet
Fig 1.
Fig 3.
W
P
(%)
(%)
DSS
der
100
100
80
60
40
20
80
60
40
20
0
0
function of mounting base temperature
20
avalanche energy as a function of
mounting-base temperature
Normalized total power dissipation as a
I
Normalised drain-source non-repetitive
0
D
= 75 A
50
60
100
100
150
140
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T
T
mb
mb
003aaf364
003aaf379
(°C)
(°C)
200
180
Rev. 3 — 19 April 2011
Fig 2.
Fig 4.
(%)
l
I
AV
D
100
10
80
60
40
20
10
0
1
2
10
function of mounting base temperature
current as a function of avalanche period
V
Normalized continuous drain current as a
unclamped inductive load
Single-shot avalanche rating; avalanche
0
−3
GS
T
j
≥ 5 V
prior to avalanche = 150 °C
N-channel TrenchMOS logic level FET
40
10
−2
80
BUK9615-100A
10
−1
120
1
160
© NXP B.V. 2011. All rights reserved.
25 °C
t
AV
T
003aaf365
003aaf380
mb
(ms)
(°C)
200
10
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