BUK9615-100A NXP Semiconductors, BUK9615-100A Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9615-100A

Manufacturer Part Number
BUK9615-100A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
BUK9615-100A
N-channel TrenchMOS logic level FET
Rev. 3 — 19 April 2011
AEC Q101 compliant
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage T
drain current
total power
dissipation
junction temperature
drain-source
on-state resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
T
V
T
I
R
T
D
j
mb
j
j
j(init)
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C
= 35 A; V
= 25 °C
= 10 V; I
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
D
sup
j
D
≤ 175 °C
= 25 A;
GS
= 25 A;
≤ 25 V;
= 5 V;
Low conduction losses due to low
on-state resistance
Min
-
-
-
-55
-
-
-
Product data sheet
Typ
-
-
-
-
11.5
12
-
Max
100
75
230
175
14.4
15
120
Unit
V
A
W
°C
mΩ
mΩ
mJ

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BUK9615-100A Summary of contents

Page 1

... BUK9615-100A N-channel TrenchMOS logic level FET Rev. 3 — 19 April 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT404 Min Max - 100 - 100 ...

Page 3

... T (°C) mb unclamped inductive load Fig 4. Single-shot avalanche rating; avalanche current as a function of avalanche period All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET 003aaf365 40 80 120 160 T ≥ 003aaf380 25 ° ...

Page 4

... P 0 −2 10 −3 10 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET =10 μ 100 μ 100 (V) DS Min Typ - - - ...

Page 5

... ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 1 2.3 0 ...

Page 6

... V (V) DS Fig 8. 003aaf370 (V) GS Fig 10. Transfer characteristics: drain current as a All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET 19 V (V) = 3.0 GS 3.2 17 3.4 3.6 4 °C j Drain-source on-state resistance as a function of drain current ...

Page 7

... I (A) D Fig 12. Normalized drain-source on-state resistance 003aaf374 100 200 T (°C) j Fig 14. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET 3 a 2.5 2 1.5 1 0.5 −100 0 100 ...

Page 8

... V ( Fig 16. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET 003aaf377 °C; I ...

Page 9

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9615-100A separated from data sheet BUK9515_9615-100A_2. Product specification All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 19 April 2011 BUK9615-100A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: BUK9615-100A ...

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