BUK9610-100B NXP Semiconductors, BUK9610-100B Datasheet - Page 9

• Manufacturer Part Number: BUK9610-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9610-100B
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
20
V
DD
= 14 V
40
60
(A)
I
S
100
80
60
40
20
0
V
0.0
DD
80
All information provided in this document is subject to legal disclaimers.
= 80 V
Q
G
03ng61
(nC)
0.2
Rev. 03 — 31 January 2011
100
T
j
= 175 °C
0.4
Fig 14. Input, output and reverse transfer capacitances
(pF)
0.6
C
12000
10000
8000
6000
4000
2000
0
10
as a function of drain-source voltage; typical
values
T
0.8
−1
j
= 25 °C
V
SD
03ng60
C
C
C
(V)
N-channel TrenchMOS logic level FET
iss
rss
oss
1.0
1
BUK9610-100B
10
V
© NXP B.V. 2011. All rights reserved.
DS
(V)
03ng67
10
2
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