BUK9610-100B NXP Semiconductors, BUK9610-100B Datasheet - Page 2

• Manufacturer Part Number: BUK9610-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK9610-100B
Product data sheet
Pin
1
2
3
mb
Type number
BUK9610-100B
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 31 January 2011
Simplified outline
…continued
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
GS
= 75 A; V
SOT404 (D2PAK)
Figure 13
= 5 V; I
= 80 V; T
= 50 Ω; V
= 25 °C; unclamped
1
D
mb
sup
2
= 25 A;
j
GS
= 25 °C;
3
≤ 100 V;
= 5 V;
N-channel TrenchMOS logic level FET
BUK9610-100B
Graphic symbol
Min
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Typ
-
32
D
S
Version
SOT404
Max Unit
629
-
2 of 14
mJ
nC