BUK9535-55A NXP Semiconductors, BUK9535-55A Datasheet - Page 6

• Manufacturer Part Number: BUK9535-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9535-55A
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
DS(on)
(A)
I
D
100
80
60
40
20
32
30
28
26
24
22
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
I
Drain-source on-state resistance as a function
0
3
D
j
= 25 °C
V
= 25 A
GS
7.5
7.0
6.5
(V) = 10
2
3.8
5
4
7
6
9
All information provided in this document is subject to legal disclaimers.
8
I
003aaf287
V
003aaf289
D
DS
(A)
6.0
5.5
5.0
4.8
4.4
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
(V)
10
11
Rev. 02 — 28 April 2011
Fig 8.
Fig 10. Transfer characteristics: drain current as a
R
(mΩ)
DS(on)
(A)
I
D
40
35
30
25
20
80
60
40
20
0
of drain current; typical values
function of gate-source voltage; typical values
T
Drain-source on-state resistance as a function
V
0
0
j
DS
= 25 °C
> I
N-channel TrenchMOS logic level FET
D
x R
20
2
T
j
DSon
= 175 °C
V
GS
BUK9535-55A
(V) = 3.0
40
4
T
j
= 25 °C
60
3.2
6
3.4
© NXP B.V. 2011. All rights reserved.
3.6
V
I
003aaf288
003aaf290
4.0
GS
D
(A)
5.0
(V)
80
8
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