BUK9535-55A NXP Semiconductors, BUK9535-55A Datasheet - Page 4

• Manufacturer Part Number: BUK9535-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9535-55A
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Z
(K/W)
th(j-mb)
I
(A)
AV
10
10
10
10
10
−1
−2
1
1
2
10
10
−3
−7
All information provided in this document is subject to legal disclaimers.
δ = 0.5
0.05
0.02
T
0.2
0.1
j
prior to avalanche = 150 °C
0
10
−6
10
10
Rev. 02 — 28 April 2011
−2
−5
10
−4
10
10
−1
−3
Conditions
in free air
P
10
−2
t
p
10
1
T
−1
25 °C
t
AV
003aaf300
003aaf286
δ =
1
(ms)
t
p
N-channel TrenchMOS logic level FET
T
t
(s)
t
p
10
10
BUK9535-55A
Min
-
-
Typ
-
60
© NXP B.V. 2011. All rights reserved.
-
Max
1.8
Unit
K/W
K/W
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