BUK9535-100A NXP Semiconductors, BUK9535-100A Datasheet - Page 8

• Manufacturer Part Number: BUK9535-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9535-100A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
3
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
100
80
60
40
20
120
0
0
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T
j
( ° C)
03aa29
180
Rev. 2 — 9 February 2011
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
1.0
7000
6000
5000
4000
3000
2000
1000
0
T
as a function of drain-source voltage; typical
values
10
j
V
= 25 °C
SD
−2
C
C
C
oss
rss
iss
(V)
03nd06
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9535-100A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nd13
(V)
10
2
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