BUK9535-100A NXP Semiconductors, BUK9535-100A Datasheet - Page 7

• Manufacturer Part Number: BUK9535-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9535-100A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
(V)
D
100
2.5
1.5
0.5
80
60
40
20
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
1
0
T
j
= 175 °C
60
2
max
typ
min
T
j
120
= 25 °C
3
All information provided in this document is subject to legal disclaimers.
V
03aa33
T
GS
j
( ° C)
03nd09
(V)
180
Rev. 2 — 9 February 2011
4
Fig 10. Gate-source voltage as a function of gate
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
40
35
30
25
20
5
4
3
2
1
0
charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS logic level FET
20
20
V
GS
BUK9535-100A
V
DD
(V) = 3
40
= 14 V
40
3.2
60
V
Q
© NXP B.V. 2011. All rights reserved.
DD
3.4
G
3.6
4
I
3.8
(nC)
D
= 80 V
5
(A)
03nd07
03nd12
80
60
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