BUK9520-100A NXP Semiconductors, BUK9520-100A Datasheet - Page 7

• Manufacturer Part Number: BUK9520-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9520-100A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
(V)
D
2.5
1.5
0.5
80
60
40
20
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
1
T
j
= 175 °C
60
max
typ
min
2
120
V
T
All information provided in this document is subject to legal disclaimers.
j
GS
= 25 °C
03aa33
T
j
(V)
( ° C)
03nd83
Rev. 02 — 7 February 2011
180
3
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
40
30
20
10
5
4
3
2
1
0
junction temperature
of drain current; typical values
0
0
V
N-channel TrenchMOS logic level FET
GS
20
50
(V) = 3
100
40
BUK9520-100A
V
3.2 3.4 3.6 3.8
DD
= 14 V
150
60
V
DD
= 80 V
200
© NXP B.V. 2011. All rights reserved.
80
Q
5
I
G
D
03nd81
03nd86
(nC)
(A)
100
250
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