BUK9520-100A NXP Semiconductors, BUK9520-100A Datasheet - Page 4

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9520-100A

Manufacturer Part Number
BUK9520-100A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Manufacturer
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Part Number:
BUK9520-100A
Manufacturer:
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Quantity:
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Part Number:
BUK9520-100A
Manufacturer:
NXP
Quantity:
12 500
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5. Thermal characteristics
Table 5.
BUK9520-100A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
−1
−2
−3
1
3
2
1
10
1
−6
P
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
R
t
DSon
p
T
10
= V
−5
δ =
DS
T
t
/ I
t
p
All information provided in this document is subject to legal disclaimers.
D
Conditions
see
vertical in still air
D.C.
10
Rev. 02 — 7 February 2011
10
−4
Figure 4
10
−3
10
10
−2
2
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
N-channel TrenchMOS logic level FET
P
V
DS
10
t
p
(V)
−1
T
BUK9520-100A
t
p
Min
-
-
δ =
(s)
03nd88
03nd89
t
T
t
p
10
1
3
Typ
-
60
© NXP B.V. 2011. All rights reserved.
-
Max
0.75
Unit
K/W
K/W
4 of 13

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