BUK9217-75B NXP Semiconductors, BUK9217-75B Datasheet - Page 7

• Manufacturer Part Number: BUK9217-75B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9217-75B
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
D
160
(A)
120
I
D
80
40
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
min
1
4
V
GS
typ
(V) = 2.6
6
2
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
10
7
6
5
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
V
(V)
DS
03no46
03ng53
(V)
Rev. 02 — 3 February 2011
10
3
Fig 6.
Fig 8.
R
(mΩ)
DSon
100
(A)
I
26
22
18
14
10
75
50
25
D
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
3
0
T
N-channel TrenchMOS logic level FET
j
1
= 185 °C
7
2
BUK9217-75B
T
3
j
= 25 °C
11
V
© NXP B.V. 2011. All rights reserved.
GS
4
V
(V)
GS
03no45
03no44
(V)
15
5
7 of 16