BUK9217-75B,118 NXP Semiconductors, BUK9217-75B,118 Datasheet
BUK9217-75B,118
Specifications of BUK9217-75B,118
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BUK9217-75B,118 Summary of contents
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... BUK9217-75B N-channel TrenchMOS logic level FET Rev. 02 — 3 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Product data sheet Simplified outline 1 SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET Graphic symbol mb G mbb076 2 3 Version SOT428 © ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET Min - - - see Figure see Figure 1 - ≤ 10 µ Figure 2 ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9217-75B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET 03no49 = 10 μ 100 μ 100 ms 2 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9217-75B Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET Min Typ - - - 71.4 03nk52 t p δ ...
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... ° ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET Min Typ Max = 25 ° -55 ° 1.1 1 500 - 0 ...
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... V (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET 26 R DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values 100 I D (A) 75 ...
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... Fig 10. Drain-source on-state resistance as a function of drain current; typical values 03np01 ( 150 220 T (°C) j Fig 12. Gate-source voltage as a function of turn-on gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET 3.8 V ( 120 ...
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... BUK9217-75B Product data sheet 100 185 ° 0.0 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET 03no41 = 25 ° 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... NXP Semiconductors ( Fig 14. Forward transconductance as a function of drain current; typical values BUK9217-75B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET 03no43 (A) © NXP B.V. 2011. All rights reserved ...
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... Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK9217-75B Product data sheet C iss C oss 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET 03no48 (V) © NXP B.V. 2011. All rights reserved ...
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... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9217-75B v.2 20110203 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9217-75B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2011 Document identifier: BUK9217-75B ...