BUK7Y13-40B NXP Semiconductors, BUK7Y13-40B Datasheet - Page 4

• Manufacturer Part Number: BUK7Y13-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7Y13-40B_3
Product data sheet
Symbol
R
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
Z
(K/W)
(A)
th (j-mb)
I
10
10
10
D
10
10
10
10
−1
-1
-2
1
1
3
2
T
10
1
mb
-6
0.2
δ = 0.5
0.05
0.02
0.1
Thermal characteristics
= 25 °C; I
single shot
Parameter
thermal resistance
from junction to
mounting base
Limit R
DSon
DM
is single pulse
= V
10
DS
-5
/ I
D
Conditions
see
Figure 5
10
-4
Rev. 03 — 26 May 2008
DC
10
10
-3
N-channel TrenchMOS standard level FET
10
Min
-
-2
V
DS
(V)
BUK7Y13-40B
Typ
-
t
100 μs
1 ms
10 ms
100 ms
p
10
P
= 10 μs
-1
t
p
T
t
p
Max
1.8
© NXP B.V. 2008. All rights reserved.
(s)
003aab218
δ =
03nm01
T
t
p
t
10
1
2
Unit
K/W
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