BUK7E04-40A NXP Semiconductors, BUK7E04-40A Datasheet - Page 8

• Manufacturer Part Number: BUK7E04-40A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E04-40A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
150
100
50
10
0
8
6
4
2
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
100
(V) = 6
2
T
j
= 175 °C
200
7
4
300
T
V
j
GS
All information provided in this document is subject to legal disclaimers.
= 25 °C
I
D
(V)
(A)
03ne63
03ne66
10
8
9
400
6
Rev. 03 — 15 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7E04-40A
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
(°C)
( ° C)
03aa32
03aa27
180
180
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