BUK7E04-40A NXP Semiconductors, BUK7E04-40A Datasheet - Page 2

• Manufacturer Part Number: BUK7E04-40A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7E04-40A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7E04-40A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
I2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source avalanche
energy
gate-drain charge
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 15 June 2010
Simplified outline
SOT226 (I2PAK)
…continued
1
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
mb
GS
2
= 75 A; V
Figure 13
= 32 V; T
= 50 Ω; V
= 10 V; I
3
= 25 °C; unclamped
N-channel TrenchMOS standard level FET
sup
D
j
GS
= 25 °C;
= 25 A;
≤ 40 V;
= 10 V;
Graphic symbol
BUK7E04-40A
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
50
SOT226
Version
Max Unit
1.6
-
2 of 14
J
nC