BUK7880-55A NXP Semiconductors, BUK7880-55A Datasheet - Page 3

• Manufacturer Part Number: BUK7880-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7880-55A_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
P
10
(%)
D
120
10
der
10
80
40
-1
0
2
1
10
function of solder point temperature
T
P
0
sp
der
-1
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
DM
tot
is single pulse.
Limit R
100 %
100
DSon
= V
DS
150
/ I
D
T
03aa17
sp
1
( C)
Rev. 01 — 1 November 2007
200
Fig 2. Continuous drain current as a function of
(A)
I
D
DC
8
6
4
2
0
V
solder point temperature
0
GS
N-channel TrenchMOS standard level FET
10 V
10
50
BUK7880-55A
V
DS
100
(V)
T
© NXP B.V. 2007. All rights reserved.
sp
t
p
100 s
003aab530
1 ms
10 ms
100 ms
003aab532
= 10 s
( C)
10
150
2
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