BUK7613-75B NXP Semiconductors, BUK7613-75B Datasheet - Page 7

• Manufacturer Part Number: BUK7613-75B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7613-75B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
40
30
20
10
75
50
25
0
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
2
5.5
T
j
60
= 175 °C
6
6.5
4
Label is V
T
7
j
= 25 °C
120
7.5
6
8
GS
I
All information provided in this document is subject to legal disclaimers.
V
D
GS
(A)
(V)
03nm76
03nm79
(V)
10
Rev. 3 — 27 December 2011
180
8
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7613-75B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
(°C)
03aa32
03nb25
180
180
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