BUK7613-75B,118 NXP Semiconductors, BUK7613-75B,118 Datasheet

MOSFET N-CH 75V 75A D2PAK

BUK7613-75B,118

Manufacturer Part Number
BUK7613-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7613-75B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
157W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
40nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
157000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057739118::BUK7613-75B /T3::BUK7613-75B /T3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7613-75B,118
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK7613-75B
N-channel TrenchMOS standard level FET
Rev. 2 — 17 November 2010
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive systems
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 175 °C
mb
= 25 A;
Figure
= 25 °C;
Figure 2
Figure 3
11;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Min
-
-
-
-
Product data sheet
Typ
-
-
-
11.7
Max Unit
75
75
157
13
V
A
W
mΩ

Related parts for BUK7613-75B,118

BUK7613-75B,118 Summary of contents

Page 1

... BUK7613-75B N-channel TrenchMOS standard level FET Rev. 2 — 17 November 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET Min - - -20 Figure 1 - Figure 1; - ≤ 10 µ -55 - ° Ω; ...

Page 4

... Product data sheet = DSon Conditions see Figure 4 mounted on a printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET 03nm81 = 10 μ 100 μ 100 (V) DS Min Typ - - ...

Page 5

... ° ° see Figure /dt = -100 A/µ - ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B Min Typ Max Unit 4 500 µA - 0.02 1 µ 100 ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET 30 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03nm79 Label 120 180 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nm73 1.5 V ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7613-75B separated from data sheet BUK75_7613_75B-01. BUK75_7613_75B-01 20030414 BUK7613-75B Product data sheet ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2010 BUK7613-75B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 November 2010 Document identifier: BUK7613-75B ...

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