BUK7509-55A NXP Semiconductors, BUK7509-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7509-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7509-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
400
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
20
2
4
min
14
9.5
8.5
7.5
6.5
5.5
4.5
12
10
9
8
7
6
5
typ
6
label is V
4
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
GS
V
DS
(V)
03aa35
(V)
03nj17
(V)
Rev. 02 — 2 February 2011
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
60
40
20
12
10
8
6
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
20
BUK7509-55A
15
40
V
© NXP B.V. 2011. All rights reserved.
I
GS
D
(A)
(V)
03nj16
03nj14
20
60
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