BUK7509-55A NXP Semiconductors, BUK7509-55A Datasheet - Page 4

• Manufacturer Part Number: BUK7509-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7509-55A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
−1
−2
−3
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
0.05
−1
single shot
−6
0.2
0.1
0.02
δ = 0.5
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
10
−5
Capped at 75 A due to package
Limit R
All information provided in this document is subject to legal disclaimers.
10
1
−4
Conditions
see
vertical in still air
DSon
Rev. 02 — 2 February 2011
= V
Figure 4
DS
/I
D
10
−3
N-channel TrenchMOS standard level FET
10
DC
10
−2
BUK7509-55A
Min
-
-
10−
V
DS
1
(V)
Typ
-
60
t
t
© NXP B.V. 2011. All rights reserved.
p
p
= 10 μs
(s)
100 μs
1 ms
10 ms
100 ms
Max
0.71
-
03nj20
03nj21
10
1
2
Unit
K/W
K/W
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