PESD5V0L7BAS_BS NXP Semiconductors, PESD5V0L7BAS_BS Datasheet - Page 5

• Manufacturer Part Number: PESD5V0L7BAS_BS
• Description: Low capacitance 7-fold bidirectional ESD protection diode arrays in small plasticpackages designed for the protection of up to seven transmission or data lines fromdamage caused by ElectroStatic Discharge (ESD) and other transients
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PESD5V0L7BAS_BS
Product data sheet
Fig 3.
Fig 5.
P
(pF)
(W)
C
PP
10
d
10
1
9
8
7
6
2
1
T
Peak pulse power as a function of exponential
pulse duration t
0
T
Diode capacitance as a function of reverse
voltage; typical values
amb
amb
= 25 C
= 25 C; f = 1 MHz
1
10
2
p
; typical values
10
2
3
10
3
All information provided in this document is subject to legal disclaimers.
4
001aaa192
t
001aaa142
p
V
(μs)
R
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
(V)
10
5
Rev. 4 — 23 June 2010
4
Fig 4.
Fig 6.
P
I
RM(25°C)
PP(25°C)
P
I
PP
RM
1.2
0.8
0.4
10
1
0
−100
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
−50
50
0
100
50
150
© NXP B.V. 2010. All rights reserved.
100
001aaa193
T
001aaa143
j
T
(°C)
j
(°C)
200
150
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