PESD5V0L7BAS_BS NXP Semiconductors, PESD5V0L7BAS_BS Datasheet - Page 4

• Manufacturer Part Number: PESD5V0L7BAS_BS
• Description: Low capacitance 7-fold bidirectional ESD protection diode arrays in small plasticpackages designed for the protection of up to seven transmission or data lines fromdamage caused by ElectroStatic Discharge (ESD) and other transients
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 9.
T
[1]
PESD5V0L7BAS_BS
Product data sheet
Symbol
Per diode
V
I
V
V
r
C
RM
dif
amb
Fig 1.
RWM
CL
BR
d
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5; see
= 25
(%)
I
PP
120
80
40
0

0
IEC 61000-4-5
8/20 s pulse waveform according to
C unless otherwise specified
Characteristics
Parameter
reverse standoff voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
10
100 % I
e
−t
PP
20
; 8 μs
50 % I
30
PP
; 20 μs
All information provided in this document is subject to legal disclaimers.
Conditions
V
I
I
I
I
V
see
001aaa630
PP
PP
R
R
t (μs)
RWM
R
= 1 mA
= 1 mA
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
= 0 V; f = 1 MHz;
= 1 A
= 2.5 A
Figure 5
= 5 V; see
40
Rev. 4 — 23 June 2010
Figure 6
Fig 2.
100 %
90 %
10 %
ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
I
PP
[1]
[1]
t
r
30 ns
= 0.7 ns to 1 ns
Min
-
-
-
-
7.2
-
-
60 ns
Typ
-
3
-
-
7.6
-
8
Figure
1.
© NXP B.V. 2010. All rights reserved.
Max
5
25
11
17
7.9
100
10
001aaa631
t
Unit
V
nA
V
V
V

pF
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