BAS21H NXP Semiconductors, BAS21H Datasheet - Page 5

• Manufacturer Part Number: BAS21H
• Description: Single high-voltage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BAS21H_2
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of junction
(1) T
(2) T
(3) T
(1) V
(2) V
( A)
I
(mA)
10
10
R
600
400
200
10
I
F
10
0
2
1
1
2
voltage
temperature
0
0
amb
amb
amb
R
R
= V
= V
= 150 C; typical values
= 25 C; typical values
= 25 C; maximum values
Rmax
Rmax
; maximum values
; typical values
(1)
(2)
100
1
(1)
(2)
V
T
j
F
( C)
(V)
(3)
mbg384
mbg381
200
2
Rev. 02 — 3 November
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
I
FSM
(A)
(pF)
10
C
10
1.0
0.8
0.6
0.4
0.2
10
d
1
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
1
0
j
= 25 C; prior to surge
Single high-voltage switching diode
10
2
amb
= 25 C
10
4
2
10
6
© NXP B.V. 2006. All rights reserved.
3
BAS21H
t
V
p
R
( s)
mbg447
mbg703
(V)
10
8
4
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