BAS21H NXP Semiconductors, BAS21H Datasheet - Page 4

Single high-voltage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package

BAS21H

Manufacturer Part Number
BAS21H
Description
Single high-voltage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
7. Characteristics
BAS21H_2
Product data sheet
Table 7.
T
[1]
[2]
Symbol Parameter
V
I
C
t
R
rr
amb
F
d
Pulse test: t
When switched from I
= 25 C unless otherwise specified.
forward voltage
reverse current
diode capacitance
reverse recovery time
Characteristics
p
300 s;
F
= 30 mA to I
Rev. 02 — 3 November
0.02.
R
Conditions
I
I
V
V
V
= 30 mA; R
F
F
R
R
R
= 100 mA
= 200 mA
= 200 V
= 200 V; T
= 0 V; f = 1 MHz
L
= 100 ; measured at I
j
= 150 C
Single high-voltage switching diode
[1]
[1]
[2]
Min
-
-
-
-
-
-
R
= 3 mA.
Typ
-
-
-
-
-
-
© NXP B.V. 2006. All rights reserved.
BAS21H
Max
1
1.25
100
100
5
50
Unit
V
V
nA
pF
ns
4 of 10
A

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