BAT960 NXP Semiconductors, BAT960 Datasheet - Page 2

Planar Schottky barrier diode with an integrated guard ringfor stress protection in a SOT666 ultra small SMD plasticpackage

BAT960

Manufacturer Part Number
BAT960
Description
Planar Schottky barrier diode with an integrated guard ringfor stress protection in a SOT666 ultra small SMD plasticpackage
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT960
Manufacturer:
NXP
Quantity:
24 000
NXP Semiconductors
FEATURES
• High current capability
• Very low forward voltage
• Ultra small plastic SMD package
• Flat leads: excellent coplanarity and improved thermal
APPLICATIONS
• Ultra high-speed switching
• rectification
• DC/DC conversion
• Switch mode power supply
• Inverse polarity protection.
GENERAL DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection in a SOT666 ultra small SMD plastic
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Only valid, if pins 3 and 4 are connected in parallel.
2003 May 01
V
I
I
T
T
T
SYMBOL
F
FSM
behaviour.
R
stg
j
amb
Schottky barrier diode
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
PARAMETER
t = 8.3 ms half sinewave;
JEDEC method; note 1
2
CONDITIONS
PINNING
handbook, halfpage
Marking code: B9.
PIN
1
2
3
4
5
6
Fig.1 Simplified outline (SOT666) and symbol.
6
1
cathode
cathode
anode
anode
cathode
cathode
5
2
3
4
−65
−65
MIN.
DESCRIPTION
1, 2
5, 6
23
1
8
+150
125
+125
Product data sheet
MAX.
BAT960
MHC310
3, 4
V
A
A
°C
°C
°C
UNIT

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