BYV34G-600 NXP Semiconductors, BYV34G-600 Datasheet - Page 5

Dual ultrafast power diode in a SOT226 (low profile 3-lead TO-220AB) plastic package

BYV34G-600

Manufacturer Part Number
BYV34G-600
Description
Dual ultrafast power diode in a SOT226 (low profile 3-lead TO-220AB) plastic package
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYV34G-600,127
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BYV34G-600_1
Product data sheet
Fig 3.
Fig 5.
I
I
R
F
P
(W)
tot
18
15
12
9
6
3
0
Reverse recovery definitions
I
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
F(AV)
dl
dt
F
= I
I
RM
F(RMS)
0.1
Q
r
5
0.2
t
rr
0.5
10
I
= 1
F(AV)
003aab483
(A)
Rev. 01 — 25 February 2009
15
25 %
003aac562
time
100 %
Fig 4.
Fig 6.
V
I
F
F
(W)
P
tot
12
10
8
6
4
2
0
Forward recovery definitions
a = form factor = I
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
0
4.0
3
F(RMS)
Dual rectifier diode, ultrafast
2.8
/ I
BYV34G-600
F(AV)
2.2
6
1.9
a = 1.57
© NXP B.V. 2009. All rights reserved.
I
F(AV)
003aab484
(A)
V
F
9
001aab912
time
time
V
5 of 9
FRM

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