BYV34G-600 NXP Semiconductors, BYV34G-600 Datasheet - Page 4

• Manufacturer Part Number: BYV34G-600
• Description: Dual ultrafast power diode in a SOT226 (low profile 3-lead TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BYV34G-600_1
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
j
Fig 2.
F
FR
r
= 25 C unless otherwise specified.
(1) T
(2) T
(3) T
Forward current as a function of forward voltage
j
j
j
Characteristics
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
(A)
I
F
30
25
20
15
10
Conditions
I
I
V
V
I
see
I
dI
see
I
dI
see
I
see
F
F
F
F
F
F
5
0
R
R
F
F
= 10 A; T
= 20 A
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
0
/dt = 100 A/ s; ramp recovery;
/dt = 50 A/ s; T
= 600 V
= 600 V; T
Figure 3
Figure 3
Figure 3
Figure 4
Rev. 01 — 25 February 2009
j
0.4
F
R
R
= 150 C; see
/dt = 10 A/ s;
R
j
= 30 V; dI
= 30 V;
= 100 C
= 30 V;
j
= 100 C;
0.8
F
/dt = 20 A/ s;
(1)
Figure 2
(2)
1.2
(3)
003aab485
V
F
(V)
1.6
Min
-
-
-
-
-
-
-
-
Dual rectifier diode, ultrafast
BYV34G-600
Typ
0.92
1.07
10
0.2
40
50
3
3.2
© NXP B.V. 2009. All rights reserved.
Max
1.16
1.48
50
0.6
70
60
5
-
Unit
V
V
mA
nC
ns
A
V
A
4 of 9