BYT28-300 NXP Semiconductors, BYT28-300 Datasheet - Page 4

• Manufacturer Part Number: BYT28-300
• Description: Dual ultrafast power diode in the SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BYT28_SER
Product data sheet
Fig 2.
Fig 4.
I
I
R
F
(W)
P
F
10
8
6
4
2
0
Reverse recovery definitions
0
Per diode.
I
Forward power dissipation as a function of
average forward current; maximum values
F(AV)
dl
dt
F
= I
I
RM
F(RMS)
Q
2
0.1
r
 .
0.2
t
rr
4
I
0.5
t
p
T
6
All information provided in this document is subject to legal disclaimers.
I
F(AV)
001aab913
δ = 1.0
δ =
t
t
(A)
T
p
Rev. 5 — 3 November 2011
001aab911
10 %
8
105
114
118.5
123
127.5
132
136.5
141
145.5
150
T
time
mb(max)
(°C)
100 %
Fig 3.
Fig 5.
V
I
F
F
(W)
P
F
6
4
2
0
0
Forward recovery definitions
Per diode.
a = form factor = I
Forward power dissipation as a function of
average forward current; maximum values
1
4
F(RMS)
2
Dual rectifier diodes ultrafast
2.8
BYT28 series
/ I
F(AV)
V
R
3
2.2
o
s
=
=
.
0.945 V
0.021 Ω
1.9
© NXP B.V. 2011. All rights reserved.
4
001aab914
I
a = 1.57
F(AV)
V
(A)
F
5
001aab912
123
127.5
132
136.5
141
145.5
150
T
time
time
mb(max)
(°C)
4 of 10
V
FRM