BYT28-300 NXP Semiconductors, BYT28-300 Datasheet - Page 3

• Manufacturer Part Number: BYT28-300
• Description: Dual ultrafast power diode in the SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BYT28_SER
Product data sheet
Symbol
Characteristics are per diode
V
I
Q
t
I
V
R
rr
RRM
j
Fig 1.
F
fr
S
= 25
Z
(K/W)
th(j-mb)
10
10
10

10
−1
−2
−3
C; unless otherwise stated.
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
Parameter
forward voltage
reverse current
reverse recovery charge
reverse recovery time
repetitive peak reverse current
forward recovery voltage
Characteristics
10
−5
10
−4
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
V
V
I
see
I
see
I
T
I
F
F
F
F
F
F
j
R
R
= 5 A; T
= 10 A
= 2 A; V
= 1 A; V
= 5 A; V
= 100 C; see
= 1 A; dI
= V
= V
Rev. 5 — 3 November 2011
Figure 9
Figure 6
RRM
RRM
10
−3
j
R
R
R
; T
F
= 150 C
/dt = 10 A/s
 30 V; dI
 30 V; dI
 30 V; dI
j
= 100 C
Figure 7
10
F
F
F
−2
/dt = 20 A/s;
/dt = 100 A/s;
/dt = 50 A/s;
10
−1
Dual rectifier diodes ultrafast
P
BYT28 series
Min
-
-
-
-
-
-
-
-
tot
1
t
p
T
0.95
Typ
1.3
2
10
50
50
2
2.5
© NXP B.V. 2011. All rights reserved.
t
p
001aab919
δ =
(s)
t
1.05
200
-
t
Max
1.4
10
60
60
3
T
p
10
V
V
Unit
V
A
A
nC
ns
A
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