BYQ28E-200E NXP Semiconductors, BYQ28E-200E Datasheet - Page 4

Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package

BYQ28E-200E

Manufacturer Part Number
BYQ28E-200E
Description
Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
BYQ28E-200E
Product data sheet
Symbol
R
R
Fig 3.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse width
−6
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
10
−5
10
−4
All information provided in this document is subject to legal disclaimers.
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode;
see
Rev. 4 — 14 July 2011
10
Figure 3
−3
10
−2
10
−1
BYQ28E-200E
Dual ultrafast power diodes
Min
-
-
-
P
1
Typ
-
-
60
t
p
T
© NXP B.V. 2011. All rights reserved.
t
p
001aag979
(s)
δ =
Max
3
4.5
-
t
T
t
p
10
Unit
K/W
K/W
K/W
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