BYQ28E-200E NXP Semiconductors, BYQ28E-200E Datasheet
BYQ28E-200E
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BYQ28E-200E Summary of contents
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... BYQ28E-200E Dual ultrafast power diodes Rev. 4 — 14 July 2011 1. Product profile 1.1 General description Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability. 1.2 Features and benefits Fast switching Guaranteed ESD capability ...
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... SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 4 — 14 July 2011 BYQ28E-200E Dual ultrafast power diodes Graphic symbol sym125 Version SOT78 © NXP B.V. 2011. All rights reserved. ...
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... HBM 250 pF 1.5 kΩ; all pins 001aag976 δ (W) 0 (A) F(AV) Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 4 — 14 July 2011 BYQ28E-200E Dual ultrafast power diodes Min - - - ≤ 119 ° Figure 1; ≤ 119 °C; per diode °C; ...
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... Product data sheet Conditions with heatsink compound; both diodes conducting with heatsink compound; per diode; see Figure 3 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 4 — 14 July 2011 BYQ28E-200E Dual ultrafast power diodes Min Typ Max - - 4 001aag979 ...
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... Figure / A/µ see Figure 7 001aag978 I F (2) ( 1.0 1.5 V (V) F Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 4 — 14 July 2011 BYQ28E-200E Dual ultrafast power diodes Min Typ - 0.95 Figure 4 - 0.8 Figure Figure 0 ° ...
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... Product data sheet I F time 0. 003aac563 Fig 7. Forward recovery definitions All information provided in this document is subject to legal disclaimers. Rev. 4 — 14 July 2011 BYQ28E-200E Dual ultrafast power diodes time V FRM V F time 001aab912 © NXP B.V. 2011. All rights reserved ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 1.0 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 4 — 14 July 2011 BYQ28E-200E Dual ultrafast power diodes mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN ...
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... Release date BYQ28E-200E v.4 20110714 • Modifications: Type number BYQ28E-200E separated from data sheet BYQ28E_SERIES v.3. • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 — 14 July 2011 BYQ28E-200E Dual ultrafast power diodes © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 14 July 2011 BYQ28E-200E Dual ultrafast power diodes Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 July 2011 Document identifier: BYQ28E-200E ...