BYQ28E-200 NXP Semiconductors, BYQ28E-200 Datasheet - Page 4

• Manufacturer Part Number: BYQ28E-200
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BYQ28_SER_E_ED_4
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
j
F
FR
r
= 25 C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
Fig 2. Forward current as a function of forward voltage
(1) T
(2) T
(3) T
j
j
j
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
Conditions
I
I
I
V
V
I
see
ramp recovery; I
dI
step recovery; when switched from
I
I
I
see
I
F
F
F
F
F
R
F
F
R
R
F
= 5 A; T
= 5 A; see
= 10 A; see
= 2 A to V
= 0.5 A to I
= 5 A to V
= 1 A; dI
= 0.25 A
/dt = 100 A/ s; see
= 200 V
= 200 V; T
Figure 3
Figure 3
Rev. 04 — 5 December 2007
(A)
j
I
F
F
= 150 C; see
/dt = 10 A/ s; see
R
R
15
10
Figure 2
R
5
0
j
Figure 2
= 100 C
0
= 1 A; measured at
30 V; dI
30 V; dI
F
= 1 A to V
Figure 3
F
F
/dt = 20 A/ s;
/dt = 50 A/ s;
Figure 2
0.5
R
BYQ28 series E and ED
Figure 4
30 V;
(1)
1.0
(2)
Rectifier diodes ultrafast, rugged
V
Min
-
-
-
-
-
-
-
-
-
-
F
001aag978
(3)
(V)
1.5
Typ
0.8
0.95
1.1
2
0.1
4
15
10
0.5
1
© NXP B.V. 2007. All rights reserved.
Max
0.895
1.1
1.25
10
0.2
9
25
20
0.7
-
Unit
V
V
V
mA
nC
ns
ns
A
V
A
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