CGY888C NXP Semiconductors, CGY888C Datasheet - Page 3

• Manufacturer Part Number: CGY888C
• Description: Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs MMIC
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Characteristics
Table 5.
Bandwidth to 870 MHz; V
[1]
[2]
[3]
[4]
[5]
CGY888C
Product data sheet
Symbol Parameter
G
SL
FL
CTB
CSO
Xmod
RL
RL
NF
I
tot
p
sl
in
out
G
Flatness straight line (peak to valley).
f = 55.25 MHz to 745.25 MHz; V
f = 49.75 MHz to 847.25 MHz; V
Direct Current (DC).
p
at 870 MHz minus G
power gain
slope straight line
flatness of frequency response
composite triple beat
composite second-order distortion
cross modulation
input return loss
output return loss
noise figure
total current
Characteristics
B
p
= 24 V (DC); T
at 45 MHz.
o
o
= 44 dBmV, flat output level.
= 44 dBmV, flat output level.
mb
All information provided in this document is subject to legal disclaimers.
= 35
Rev. 4 — 28 September 2010

C; unless otherwise specified.
Conditions
f = 45 MHz
f = 870 MHz
f = 45 MHz to 870 MHz
f = 45 MHz to 870 MHz
112 NTSC channels
98 PAL channels
112 NTSC channels
98 PAL channels
112 NTSC channels
f = 45 MHz to 320 MHz
f = 320 MHz to 870 MHz
f = 45 MHz to 320 MHz
f = 320 MHz to 870 MHz
f = 50 MHz
f = 870 MHz
34 dB, 870 MHz GaAs push-pull forward amplifier
[1]
[2]
[3]
[4]
[3]
[4]
[3]
[5]
Min
-
34.5
-
-
-
-
-
-
-
20
18
20
17
-
-
260
CGY888C
Typ
34
-
1.5
0.25
-
68
-
66
72
-
-
-
-
3.5
4.0
280
© NXP B.V. 2010. All rights reserved.
Max
-
36.5
-
-
65
-
63
-
-
-
-
-
-
4.0
5.0
300
Unit
dB
dB
dB
dB
dBc
dBc
dBc
dBc
dB
dB
dB
dB
dB
dB
dB
mA
3 of 8