CGY888C NXP Semiconductors, CGY888C Datasheet - Page 2

• Manufacturer Part Number: CGY888C
• Description: Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs MMIC
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
CGY888C
Product data sheet
1.4 Quick reference data
Table 1.
Bandwidth to 870 MHz; V
[1]
Table 2.
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Pin
1
2, 3
5
7, 8
9
Type number
Symbol Parameter
V
V
T
T
G
I
CGY888C
V
tot
stg
mb
B
i(RF)
ESD
p
Direct Current (DC).
supply voltage
RF input voltage
electrostatic discharge voltage Human Body Model (HBM);
storage temperature
mounting base temperature
Parameter
power gain
total current
Quick reference data
Pinning
Ordering information
Limiting values
input
common
+V
output
Description
common
All information provided in this document is subject to legal disclaimers.
B
Package
Name
-
Rev. 4 — 28 September 2010
B
= 24 V (DC); T
Description
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2  6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
34 dB, 870 MHz GaAs push-pull forward amplifier
mb
Conditions
single tone
According JEDEC standard
22-A114E
Biased; According IEC61000-4-2
Conditions
f = 45 MHz
f = 870 MHz
= 35

C; unless otherwise specified.
Simplified outline
1 3 5 7
[1]
Min
-
34.5
260
9
Typ
34
-
280
CGY888C
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Min Max
-
-
-
-
40 +100 C
20 +100 C
1
-
36.5
Max
300
2 3 7 8
30
70
2000 V
2000 V
Version
SOT115J
5
sym095
Unit
dB
dB
mA
Unit
V
dBmV
9
2 of 8