MCR08BT1 NXP Semiconductors, MCR08BT1 Datasheet - Page 5

• Manufacturer Part Number: MCR08BT1
• Description: Passivated, sensitive gate thyristor in a SOT223 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5:
T
MCR08BT1
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
Fig 6. Transient thermal impedance from junction to solder point as a function of pulse duration
T
GT
= 25
D
Z
/dt
(K/W)
th(j-sp)
10
10
10

10
C unless otherwise specified.
1
2
1
2
10
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage current V
reverse current
critical rate of rise of
off-state voltage
gate controlled turn-on
time
circuit commutated
turn-off time
5
Characteristics
10
4
Conditions
see
V
see
V
see
V
V
waveform
I
dI
V
V
R
V
I
I
T
T
TM
D
D
D
D
R
DM
D
R
GK
G
= 1.2 A; see
= 10 mA; gate open circuit; see
V
V
R
gate open circuit
/dt = 0.1 A/s
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 67 % V
= 35 V; dI
= 2 A; V
D
D
GK
All information provided in this document is subject to legal disclaimers.
Figure 8
Figure 10
Figure 11
= 1 k
= 67 % V
10
= 12 V
= V
DRM(max)
RRM(max)
= 1 k
3
DRM(max)
Rev. 4 — 2 November 2011
T
GT
GT
D
DRM(max)
TM
= 10 mA; gate open circuit;
= V
DRM(max)
= 0.5 mA; R
= 0.5 mA; R
Figure 9
; T
; T
/dt = 30 A/s; dV
DRM(max)
; T
j
j
= 125 C; R
= 125 C; R
j
; T
= 125 C
10
; T
j
= 125 C; I
j
2
; I
= 125 C; exponential
GK
GK
G
= 10 mA;
= 1 k;
= 1 k;
GK
GK
D
= 1 k
= 1 k
/dt = 2 V/s;
Figure 7
TM
= 1.6 A;
10
1
Min
-
-
-
-
-
0.2
-
-
500
-
-
-
P
1
MCR08BT1
t
p
Thyristor; logic level
Typ
50
2
2
1.25
0.5
0.3
0.05
0.05
800
25
2
100
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
001aac114
=
Max
200
6
5
1.7
0.8
-
0.1
0.1
-
-
-
-
t
T
t
p
10
Unit
A
mA
mA
V
V
V
mA
mA
V/s
V/s
s
s
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