MCR08BT1 NXP Semiconductors, MCR08BT1 Datasheet - Page 4

• Manufacturer Part Number: MCR08BT1
• Description: Passivated, sensitive gate thyristor in a SOT223 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 4:
MCR08BT1
Product data sheet
Symbol
R
R
Fig 4. RMS on-state current as a function of surge
th(j-sp)
th(j-a)
I
T(RMS)
(A)
2.0
1.5
1.0
0.5
0
10
duration for sinusoidal currents; maximum
values
f = 50 Hz; T
Parameter
thermal resistance from junction to
solder point
thermal resistance from junction to
ambient
2
Thermal characteristics
sp
10
 112 C.
1
1
surge duration (s)
All information provided in this document is subject to legal disclaimers.
001aac107
Rev. 4 — 2 November 2011
10
Conditions
see
printed-circuit board mounted,
minimum footprint
printed-circuit board mounted, pad
area as in
Figure 6
Figure 14
Fig 5. RMS on-state current as a function of solder
I
T(RMS)
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
point temperature; maximum values
50
T
sp
= 112 C.
0
50
Min
-
-
-
MCR08BT1
Thyristor; logic level
Typ
-
156
70
100
© NXP B.V. 2011. All rights reserved.
T
001aac108
sp
( C)
Max
15
-
-
150
Unit
K/W
K/W
K/W
4 of 13