BT152B-800R NXP Semiconductors, BT152B-800R Datasheet - Page 3

• Manufacturer Part Number: BT152B-800R
• Description: Passivated thyristors in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
September 1997
Thyristors
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
, I
th j-mb
th j-a
D
R
/dt
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
minimum footprint, FR4 board
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform gate open circuit
V
I
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
D
= 40 A
D
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= V
= 67% V
= 40 A
= 50 A; V
/dt = 50 V/μs; R
= 67% V
DRM(max)
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
R
DRM(max)
= 0.1 A
= 0.1 A
; I
; V
; I
= 0.1 A
= 0.1 A
= 25 V; dI
T
G
R
2
= 0.1 A; T
= 0.1 A; dI
= V
; T
; T
GK
RRM(max)
j
= 125 ˚C;
= 100 Ω
j
= 125 ˚C;
TM
/dt = 30 A/μs;
j
G
= 125 ˚C
; T
/dt = 5 A/μs;
j
= 125 ˚C
MIN.
MIN.
MIN.
0.25
200
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
300
1.4
0.6
0.4
0.2
Product specification
55
25
15
70
BT152B series
3
2
-
MAX.
MAX.
MAX.
1.75
1.1
1.5
1.0
32
80
60
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
V/μs
K/W
K/W
mA
mA
mA
mA
μs
μs
V
V
V