BT152B-800R NXP Semiconductors, BT152B-800R Datasheet - Page 2
BT152B-800R
Manufacturer Part Number
BT152B-800R
Description
Passivated thyristors in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
1.BT152B-400R.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT152B-800R
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1;3 Semiconductors
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope
mounting,
applications
bidirectional
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
September 1997
Thyristors
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
PIN
mb
DRM
t
GM
RGM
GM
G(AV)
stg
j
T
1
2
3
/dt
cathode
anode
gate
anode
suitable
intended
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
blocking
requiring
for
for
use
surface
voltage
high
in
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
G
DRM
/dt = 0.2 A/μs
= 50 A; I
,
1
2
G
3
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
= 0.2 A;
1
mb
j
= 25 ˚C prior to
mb
≤ 103 ˚C
BT152B-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
a
-400R -600R -800R
450
MAX. MAX. MAX. UNIT
400R
450
200
13
20
1
MAX.
650
BT152B series
Product specification
200
220
200
200
150
125
0.5
13
20
20
600R
5
5
5
650
200
13
20
1
g
800
800R
800
200
13
20
Rev 1.100
UNIT
A/μs
A
W
W
˚C
˚C
k
V
A
A
A
A
A
V
V
2
V
A
A
A
s