IRS20124SPBF International Rectifier, IRS20124SPBF Datasheet - Page 24

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IRS20124SPBF

Manufacturer Part Number
IRS20124SPBF
Description
IC DIGITAL AUDIO DRIVER 14-SOIC
Manufacturer
International Rectifier
Type
MOSFET Driverr
Datasheet

Specifications of IRS20124SPBF

Applications
Amplifiers, Receivers
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Current, Output
1
Current, Output, High Level
1 A
Current, Output, Low Level
1.2 A
Delay, Propagation, Turn-off
80 ns
Delay, Propagation, Turn-on
80 ns
Driver Type
Audio
Package
14-Lead SOIC
Package Type
14-Lead SOIC
Temperature, Operating
–40 to +124 °C
Thermal Resistance Junction/ambient
100 °C/W
Thermal Resistance, Junction To Ambient
100 °C/W
Time, Fall, Turn-off
35 ns
Time, Rise, Turn-on
40 ns
Time, Turn-off Delay
80 ns
Time, Turn-on
80 ns
Time, Turn-on Delay
80 ns
Voltage, Output, High Level
1.2 V
Voltage, Output, Low Level
0.1 V
Voltage, Supply
200 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRS20124SPBF
Manufacturer:
NPC
Quantity:
4 013
Part Number:
IRS20124SPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
OC Output Signal
The OC pin is a 20 V open drain output. The OC
pin is pulled down to ground when an over current
condition is detected. A single external pull-up
resistor can be shared by multiple IRS20124 OC
pins to form the ORing logic. In order for a micro-
processor to read the OC signal, this information
is buffered with a mono stable multi vibrator to
ensure 100 ns minimum pulse width.
Because of unpredictable logic status of the OC
pin, the OC signal should be ignored during power
up/down.
Limitation from Body Diode in MOSFET
When a Class D stage outputs a positive current,
flowing from the Class D amp to the load, the body
diode of the MOSFET will turn on when the drain
to source voltage of the MOSFET become larger
than the diode forward drop voltage. In such a
case, the sensing voltage at the V
IRS20124 is clamped by the body diode. This
means that the effective R
than expected from R
the V
to turn the OC output on before the MOSFET fails.
Therefore, the region where body diode clamping
takes a place should be avoided when setting V
.
s
node my not able to reach the threshold
DS(ON)
DS(ON)
of the MOSFET, and
is now much lower
s
pin of the
SOC-
For further application information for gate driver
IC please refer to AN-978 and DT98-2a. For fur-
ther application information for class D applica-
tion, please refer to AN-1070 and AN-1071.
Body Diode Clamp
Body Diode in MOSFET Clamps vs Voltage
0
V
IRS20124S(PbF)
S
- COM
}
OCSET2 should be
set in this region
I
D
24

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