IRS20124SPBF International Rectifier, IRS20124SPBF Datasheet - Page 20
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IRS20124SPBF
Manufacturer Part Number
IRS20124SPBF
Description
IC DIGITAL AUDIO DRIVER 14-SOIC
Manufacturer
International Rectifier
Type
MOSFET Driverr
Datasheet
1.IRS20124STRPBF.pdf
(27 pages)
Specifications of IRS20124SPBF
Applications
Amplifiers, Receivers
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Current, Output
1
Current, Output, High Level
1 A
Current, Output, Low Level
1.2 A
Delay, Propagation, Turn-off
80 ns
Delay, Propagation, Turn-on
80 ns
Driver Type
Audio
Package
14-Lead SOIC
Package Type
14-Lead SOIC
Temperature, Operating
–40 to +124 °C
Thermal Resistance Junction/ambient
100 °C/W
Thermal Resistance, Junction To Ambient
100 °C/W
Time, Fall, Turn-off
35 ns
Time, Rise, Turn-on
40 ns
Time, Turn-off Delay
80 ns
Time, Turn-on
80 ns
Time, Turn-on Delay
80 ns
Voltage, Output, High Level
1.2 V
Voltage, Output, Low Level
0.1 V
Voltage, Supply
200 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRS20124SPBF
Manufacturer:
NPC
Quantity:
4 013
Part Number:
IRS20124SPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Functional description
Programmable Dead-time
The IRS20124 has an internal deadtime generation
block to reduce the number of external components
in the output stage of a Class D audio amplifier.
Selectable deadtime through the DT/SD pin volt-
age is an easy and reliable function, which re-
quires only two external resistors. The deadtime
generation block is also designed to provide a
constant deadtime interval, independent of V
fluctuations. Since the timings are critical to the
audio performance of a Class D audio amplifier,
the unique internal deadtime generation block is
designed to be immune to noise on the DT/SD
pin and the Vcc pin. Noise-free programmable
deadtime function is available by selecting
deadtime from four preset values, which are opti-
mized and compensated.
How to Determine Optimal Deadtime
Please note that the effective deadtime in an actual
application differs from the deadtime specified in
this datasheet due to finite fall time, t
deadtime value in this datasheet is defined as the
time period from the starting point of turn-off on
one side of the switching stage to the starting
point of turn-on on the other side as shown in Fig.
5. The fall time of MOSFET gate voltage must be
subtracted from the deadtime value in the
datasheet to determine the effective dead time of
a Class D audio amplifier.
(Effective deadtime)
= (Deadtime in datasheet) – (fall time, t
f
)
f
. The
cc
A longer deadtime period is required for a MOSFET
with a larger gate charge value because of the
longer t
always beneficial to achieve better linearity in the
Class D switching stage. However, the likelihood
of shoot-through current increases with narrower
deadtime settings in mass production. Negative
values of effective deadtime may cause excessive
heat dissipation in the MOSFETs, potentially
leading to their serious damage. To calculate the
optimal deadtime in a given application, the fall
time (t
the actual circuit needs to be measured. In
addition, the effective deadtime can also vary with
temperature and device parameter variations.
Therefore, a minimum effective deadtime of 10 ns
is recommended to avoid shoot-through current
over the range of operating temperatures and
supply voltages.
HO (or LO)
LO (or HO)
f
)for both output voltages, HO and LO, in
f
. A shorter effective deadtime setting is
90%
10%
Effective Deadtime
IRS20124S(PbF)
tf
Dead-
time
Effective dead-time
10%
20