SAM7SE32 Atmel Corporation, SAM7SE32 Datasheet - Page 133

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SAM7SE32

Manufacturer Part Number
SAM7SE32
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM7SE32

Flash (kbytes)
32 Kbytes
Pin Count
144
Max. Operating Frequency
48 MHz
Cpu
ARM7TDMI
Hardware Qtouch Acquisition
No
Max I/o Pins
88
Ext Interrupts
88
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
1
Twi (i2c)
1
Uart
3
Ssc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
8
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
20.3.4.6
20.3.4.7
20.3.4.8
6222F–ATARM–14-Jan-11
Flash Security Bit Command
SAM7SE512 Select EFC Command
Memory Write Command
GP NVM bits can be read using Get Fuse Bit command (GFB). When a bit set in the Bit Mask is
returned, then the corresponding fuse bit is set.
Table 20-25. Get General-purpose NVM Bit Command
Security bits can be set using Set Security Bit command (SSE). Once the security bit is active,
the Fast Flash programming is disabled. No other command can be run. Only an event on the
Erase pin can erase the security bit once the contents of the Flash have been erased.
The SAM7SE512 security bit is controlled by the EFC0. To use the Set Security Bit command,
the EFC0 must be selected using the Select EFC command.
Table 20-26. Set Security Bit Command
The commands WPx, EA, xLB, xFB are executed using the current EFC controller. The default
EFC controller is EFC0. The Select EFC command (SEFC) allows selection of the current EFC
controller.
Table 20-27. Select EFC Command
This command is used to perform a write access to any memory location.
The Memory Write command (WRAM) is optimized for consecutive writes. An internal address
buffer is automatically increased.
Table 20-28. Write Command
Read/Write
Write
Read
Read/Write
Write
Step
1
2
Read/Write
Write
Write
Write
Write
Write
Write
Handshake Sequence
Write handshaking
Write handshaking
DR Data
GFB
Bit Mask
DR Data
SSE
DR Data
(Number of Words to Write) << 16 | (WRAM)
Address
Memory [address]
Memory [address+4]
Memory [address+8]
Memory [address+(Number of Words to Write - 1)* 4]
MODE[3:0]
CMDE
DATA
SAM7SE512/256/32
DATA[15:0]
SEFC
0 = Select EFC0
1 = Select EFC1
133

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