BGD812,112 NXP Semiconductors, BGD812,112 Datasheet - Page 6
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BGD812,112
Manufacturer Part Number
BGD812,112
Description
AMP GAIN POWER 860MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet
1.BGD812112.pdf
(10 pages)
Specifications of BGD812,112
Operating Frequency
870 MHz
Operating Supply Voltage
24 V
Supply Current
410 mA
Mounting Style
SMD/SMT
Package / Case
SOT-115
Number Of Channels
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055918112::BGD812::BGD812
NXP Semiconductors
2001 Oct 30
handbook, halfpage
handbook, halfpage
860 MHz, 18.5 dB gain power doubler
amplifier
Z
(1) V
(2)
Fig.5
Z
(1) V
(2)
Fig.7
S
S
CSO
CTB
(dB)
(dB)
= Z
= Z
−40
−50
−60
−70
−80
−50
−60
−70
−80
−90
Typ. +3 .
Typ. +3 .
o
o
L
L
.
.
= 75 ; V
= 75 ; V
0
0
Composite second order distortion as a
Composite triple beat as a function of
frequency under tilted conditions.
function of frequency under tilted
conditions.
200
200
B
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(3)
(4) Typ. 3 .
(3)
(4) Typ. 3 .
Typ.
Typ.
400
400
600
600
800
800
f (MHz)
f (MHz)
(1)
(1)
(2)
(3)
(4)
MLD354
(2)
(3)
(4)
MLD356
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o
6
handbook, halfpage
Z
(1) V
(2)
Fig.6
X mod
S
(dB)
= Z
−40
−50
−60
−70
−80
Typ. +3 .
o
L
.
0
= 75 ; V
Cross modulation as a function of frequency
under tilted conditions.
200
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(3)
(4) Typ. 3 .
Typ.
400
600
Product specification
800
f (MHz)
(1)
BGD812
(2)
(3)
(4)
MLD355
1000
(dBmV)
52
48
44
40
36
V o