PTMB100B12 Nihon Inter Electronics (NIEC), PTMB100B12 Datasheet - Page 3

• Manufacturer Part Number: PTMB100B12
• Manufacturer: Nihon Inter Electronics (NIEC)

ＰＴＭＢ１００Ｂ１２
0.05
500
200
100
0.5
0.2
0.1
10
50
20
10
5
2
1
5
2
1
5
0
V
I
V
T
I
T
Fig.7- Series Gate Impedance vs. Switching Time
C
F
C
C
CC
GE
=100A
=100A
=25℃
=25℃
=±15V
=600V
Fig.9- Reverse Recovery Characteristics
I
trr
RrM
100
10
Series Gate Impedance R
200
5x10
2x10
1x10
5x10
2x10
1x10
5x10
2x10
20
-di/dt
-1
-1
-1
-2
-2
-2
-3
-3
1
10
-5
300
(A/μs)
50
400
G
10
(Ω)
-4
(Typical)
100
500
(Typical)
Fig.11- Transient Thermal Impedance
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10
-3
toff
ton
tf
tr
200
600
Time t
10
-2
(s)
200
150
100
500
200
100
0.5
0.2
0.1
50
20
10
50
0
5
2
1
0
0
10
-1
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.10- Reverse Bias Safe Operating Area
T
1 Shot Pulse
Collector to Emitter Voltage V
C
=25℃
400
1
1
Forward Voltage V
IGBT
FRD
T
C
800
10
=25℃
2
1
F
(V)
T
C
CE
=125℃
1200
3
(V)
R
V
T
(Typical)
G
GE
C
≦125℃
=10Ω
=±15V
1600
4