PS21963-4ES Mitsumi Electronics, Corp., PS21963-4ES Datasheet - Page 2

• Manufacturer Part Number: PS21963-4ES
• Manufacturer: Mitsumi Electronics, Corp.

MAXIMUM RATINGS
INVERTER PART
CONTROL (PROTECTION) PART
TOTAL SYSTEM
Note 2: T
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ T
V
V
V
±I
±I
P
T
V
V
V
V
I
V
V
T
T
V
FO
Symbol
Symbol
Symbol
j
C
stg
CC
CC(surge)
CES
C
D
DB
IN
FO
SC
CC(PROT)
iso
C
CP
ensure safe operation of the DIP-IPM, the average junction temperature should be limited to T
C
measurement point
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Self protection supply voltage limit
(short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
IGBT chip position
FWD chip position
(T
j
= 25°C, unless otherwise noted)
Parameter
Parameter
Parameter
11.6mm
Power terminals
Control terminals
3mm
Applied between P-NU, NV, NW
Applied between P-NU, NV, NW
T
T
T
Applied between V
Applied between V
Applied between U
Applied between F
Sink current at F
Applied between CIN-V
V
T
60Hz, Sinusoidal, 1 minute,
Between pins and heat-sink plate
C
C
C
D
j
= 125°C, non-repetitive, less than 2µs
= 25°C
= 25°C, less than 1ms
= 25°C, per 1 chip
= 13.5~16.5V, Inverter part
2
O
Condition
Condition
Condition
W
Heat sink side
P
O
terminal
P1
UFB
N
, V
-V
-V
T
-V
C
NC
-U, V
P
NC
NC
point
NC
, W
, V
P
VFB
, U
N1
N
-V
-V, V
, V
NC
N
(Note 1)
(Note 2)
DIP-IPM
WFB
,
-W
j(ave)
≤ 125°C (@ T
TRANSFER-MOLD TYPE
–0.5~V
–0.5~V
–0.5~V
PS21963-4ES
–20~+125
–20~+100
–40~+125
Ratings
Ratings
Ratings
1500
24.3
450
500
600
400
16
20
20
C
INSULATED TYPE
8
1
D
D
D
≤ 100°C). However, to
+0.5
+0.5
+0.5
C
≤ 100°C).
Mar. 2007
V
Unit
Unit
Unit
mA
°C
°C
°C
W
V
rms
V
V
V
A
A
V
V
V
V
V