QM75DY-24B Mitsumi Electronics, Corp., QM75DY-24B Datasheet - Page 4

• Manufacturer Part Number: QM75DY-24B
• Manufacturer: Mitsumi Electronics, Corp.

0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
10
10
10
10
10
10
3
2
7
5
4
3
2
7
5
4
3
FORWARD BIAS SAFE OPERATING AREA
7
5
3
2
7
5
3
2
7
5
3
2
0
1
0
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
2
3 4 5 7
TRANSIENT THERMAL IMPEDANCE
–3
I
I
3
V
BASE REVERSE CURRENT –I
T
0
C
B1
NON-REPETITIVE
CHARACTERISTIC (TRANSISTOR)
CC
C
=75A
2
2
=150mA
=25°C
5
t
t
SWITCHING TIME VS. BASE
=600V
s
3
3
f
7
T
T
10
j
j
=25°C
=125°C
5
5
CURRENT (TYPICAL)
10
1
7
7
10
10
0
2
3
1
–2
TIME (s)
2 3 4 5 7
2
2
5
3
3
7
10
5
5
7
7
2
10
10
2
3
2
–1
10
2
5
1
3
B2
7
10
5
(A)
CE
2 3
7
3
(V)
2
10
0
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
2
1
0
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
–I
MITSUBISHI TRANSISTOR MODULES
j
=125°C
COLLECTOR-EMITTER REVERSE
B2
20
200
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
=1A
COLLECTOR
DISSIPATION
0.4
40
400
HIGH POWER SWITCHING USE
60
0.8
600
–V
CEO
80 100 120 140
800
1.2
(V)
SECOND
BREAKDOWN
AREA
QM75DY-24B
1000
T
T
j
j
C
=25°C
=125°C
1.6
INSULATED TYPE
1200
( C)
CE
1400
160
2.0
(V)
Feb.1999