QM75DY-2HB Mitsumi Electronics, Corp., QM75DY-2HB Datasheet
QM75DY-2HB
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QM75DY-2HB Summary of contents
Page 1
... 6 LABEL MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE • I Collector current .......................... 75A C • V Collector-emitter voltage ......... 1000V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) (7. ...
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... CE V =600V, I =75A, I =150mA, I =–1. Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE Ratings 1000 1000 1000 500 4 750 –40~+150 –40~+125 2500 1 ...
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... I =50A – (A) B MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) V =10V CE V =4. =25° =125° ...
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... VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL =25° =125° 0.4 10 COLLECTOR-EMITTER REVERSE VOLTAGE QM75DY-2HB INSULATED TYPE 400 600 800 1000 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( C) C 0.8 1.2 1.6 2.0 –V (V) CEO Feb.1999 ...
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... I =0.15A =–1. – FORWARD CURRENT QM75DY-2HB INSULATED TYPE =25° =125°C j – ...