QM15TD-HB Mitsumi Electronics, Corp., QM15TD-HB Datasheet - Page 4

• Manufacturer Part Number: QM15TD-HB
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
FORWARD BIAS SAFE OPERATING AREA
7
5
4
3
2
7
5
4
3
2
–1
7
5
3
2
7
5
3
2
7
5
3
2
10
0
2
1
0
10
COLLECTOR-EMITTER VOLTAGE V
2
1
0
10
–2
TRANSIENT THERMAL IMPEDANCE
0
–3
BASE REVERSE CURRENT –I
T
NON-REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2 3 4 5 7
3
3
3
4
4
4
5
5
5
CURRENT (TYPICAL)
7
7
7
t
t
10
10
s
f
10
DC
1
1
–2
TIME (s)
2
2
2
10
3
3
3
–1
4
4
4
5
5
5
7
7
10
2 3 4 5 7
10
–1
V
I
I
2
B1
C
T
T
CC
=15A
2
2
j
j
=90mA
=25°C
=125°C
=300V
3
3
B2
4
4
5
5
(A)
CE
7
7
10
(V)
10
10
0
3
0
100
10
10
10
32
28
24
20
16
12
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
8
4
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
100
=125°C
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
COLLECTOR
DISSIPATION
0.8
T
T
200
j
j
40
=25°C
=125°C
I
B2
300
60
=–3.0A
1.2
–V
CEO
400
80
(V)
1.6
500 600 700
100 120
SECOND
BREAKDOWN
AREA
QM15TD-HB
I
B2
C
2.0
INSULATED TYPE
=–0.5A
( C)
140
CE
800
160
2.4
(V)
Feb.1999