QM15TD-HB Mitsumi Electronics, Corp., QM15TD-HB Datasheet

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... DC current gain............................. 250 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 7 2– 5.5 EwP P BuP EwN EuP u BuN EuN N Tab#100, t=0.5 Note: All Transistor Units are Darlingtons. QM15TD-HB INSULATED TYPE File No. E80271 Dimensions in mm BvP BwP EvP EwP v w BvN BwN EvN EwN Feb.1999 ...

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... CE V =300V, I =15A, I =90mA, I =–300mA Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) MITSUBISHI TRANSISTOR MODULES QM15TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 150 –40~+150 –40~+125 2500 1 ...

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... T =125° =15A C I =10A C 10 – (A) B MITSUBISHI TRANSISTOR MODULES QM15TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125°C ...

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... VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL =25° =125° 0.4 0.8 1.2 COLLECTOR-EMITTER REVERSE VOLTAGE –V QM15TD-HB INSULATED TYPE I =–0.5A B2 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( C) C 1.6 2.0 2.4 (V) CEO Feb.1999 ...

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... – FORWARD CURRENT QM15TD-HB INSULATED TYPE =300V CC I =90mA B1 I =–300mA B2 T =25° =125° – (A) F Feb ...